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- Title
The Light Extraction Efficiency of GaN-based LED with Air-Hole Photonic Crystal Structures.
- Authors
Ge, Daohan; Hu, Zhou; Gao, Kai; Zhang, Liqiang
- Abstract
In order to improve the light extraction efficiency (LEE) of GaN-based light-emitting diodes (LEDs), a layer of cylindrical air-hole photonic crystal (PC) structure inserted into P-GaN is proposed and investigated numerically. Finite difference time domain (FDTD) method is used to make a series of simulations in the LEE of GaN-based LED with air-hole photonic crystal structure. According to the variable-controlling approach, the PC structure is simulated and optimized. The results of the simulations show that the LEE depends on the PC's position and relevant structural parameters. When PC is etched in the active layer, and its dielectric constant Period = 1 μ m, etching depth = 0. 2 μ m and air-hole radius r = 0. 2 8 μ m, higher LEE is obtained as 44.5%, translated into a 13.6-fold enhancement for the case of a planar LED. The remarkable enhancement is of particular interest for improving LEE of LED and provides a theoretical reference for future LED structure design efforts. A layer of cylindrical air-hole photonic crystal (PC) structure inserted into P-GaN is proposed and investigated numerically to improve the light extraction efficiency (LEE). The LEE depends on the PC's position and structural parameters. The LEE of a planar LED is about 44.5%.
- Subjects
PHOTONIC crystals; CRYSTAL structure; FINITE differences; LIGHT emitting diodes; PERMITTIVITY
- Publication
NANO, 2021, Vol 16, Issue 9, p1
- ISSN
1793-2920
- Publication type
Article
- DOI
10.1142/S1793292021501095