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- Title
Comparison of Fast Response and Recovery Pd Nanoparticles and Ni Thin Film Hydrogen Gas Sensors Based on Metal-Oxide-Semiconductor Structure.
- Authors
Behzadi Pour, G.; Fekri Aval, L.
- Abstract
In this study, two hydrogen sensors with Pd/SiO2/Si and Ni/SiO2/Si structures have been fabricated. Palladium nanoparticles are synthesized and then deposited on the oxide surface using spin coating. Capacitance-voltage curves for the Pd/SiO2/Si sensor at room temperature and for the Ni/SiO2/Si sensor at 140C in pure nitrogen and 1% H2-N2 mixture are described. The time required for reaching 90% of the steady-state signal magnitude () for Pd/SiO2/Si capacitor was 1.4s and for Ni/SiO2/Si capacitor was 90 s. The time interval for recovery from 90% to 10% of steady-state signal magnitude ( for Pd/SiO2/Si capacitor was 14s and for Ni/SiO2/Si capacitor was 40min. For the Pd/SiO2/Si capacitor, the response is 88% and for Ni/SiO2/Si capacitor the response is 29%. Comparison of Pd nanoparticles capacitive- and resistance-based sensors shows that the metal-oxide-semiconductor capacitive is faster and more sensitive than the resistance-based hydrogen gas sensors. The MOS sensor was fabricated on <400> n-type silicon (0.22 Ωcm). On the SiO2 film, a 100 nm layer of Pd nanoparticles has been deposited. Using Pd chloride, pectin, gelatin and distilled water, the Pd nanoparticles are synthesized. The average size of Pd nanoparticles is 10 nm. The Au film as an ohmic contact to the backside of the substrate was made by evaporating and then, wires were connected to the metal gate and Au layer.
- Subjects
PALLADIUM compounds; METAL nanoparticles; THIN films; METAL oxide semiconductor field; HYDROGEN detectors; TEMPERATURE effect
- Publication
NANO, 2017, Vol 12, Issue 8, p-1
- ISSN
1793-2920
- Publication type
Article
- DOI
10.1142/S1793292017500965