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- Title
Impact of post deposition annealing in N ambient on structural properties of nanocrystalline hafnium oxide thin film.
- Authors
Pandey, Shilpi; Kothari, Prateek; Rangra, K.; Verma, Seema
- Abstract
HfO thin films (100 nm) has been deposited by sputtering technique and further annealed at various temperatures ranges from 400 to 1000 °C with increment of 200 °C in N ambient for 10 min. The samples have been characterized using XRD, FTIR, EDX, AFM and Laser Ellipsometry. Structural properties of thin film such as crystallite size, phase, orientation and stress have significantly influenced by process parameters viz., annealing temperature as well as by ambient conditions. The electrical properties of thin films have strong dependence on the arrangement of atoms. AFM data shows the size of nanoparticles increase with annealing temperature i.e. 38-53 nm. Due to post deposition annealing treatment in N ambient, the structural properties i.e. crystal size as well as stress and the electrical properties viz., refractive index at 632 nm wavelength, roughness are highly influenced. For better quality of thin film, it is desired to have a close match of interplanar spacing with standard International Centre for Diffraction Data so that film can deposit without lattice mismatch. Due to close match of interplanar spacing in N ambient in comparison to O ambient, it is concluded that HfO thin film annealed in N ambient shows better structural properties as well as electrical properties.
- Subjects
HAFNIUM oxide films; SPUTTER deposition; ANNEALING of crystals; TEMPERATURE effect; REFRACTIVE index
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 1, p760
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5587-x