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- Title
Domain structure and leakage mechanism of BiFeO thin films deposited at different temperatures.
- Authors
Li, Huiqin; Liu, Jingsong; Liao, Qilong; Zhang, Wanli; Zhang, Shuren
- Abstract
Pulsed laser deposition method was carried out to fabricate BiFeO (BFO) thin films at different temperatures. Different deposition temperatures resulted in different crystal and domain structures, which affected the leakage mechanism and ferroelectric properties. Attributed to the screen effect of conductive domain walls, the films deposited at high temperature exhibited low leakage. For BFO films, an Ohmic conduction was the main conduction type at low electric field, and a Space-Charge-Limited Current type dominated at higher electric field.
- Subjects
FERROMAGNETIC materials; MAGNETIC domain; BISMUTH iron oxide; THIN film research; FERROELECTRIC ceramics; ELECTRIC fields; SPACE-charge-limited conduction
- Publication
Journal of Materials Science: Materials in Electronics, 2014, Vol 25, Issue 7, p2998
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-1973-4