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- Title
Raman spectroscopy determination of carrier concentration in n-InGaAs epitaxial films.
- Authors
Avakyants, L.; Kolmakova, T.
- Abstract
We have studied in detail the coupled phonon-plasmon mode Raman spectra of n-InGaAs with n in the range 10 to 10 cm. The results indicate that the behavior of the high-frequency mode L can be described in terms of coupled modes in the Drude approximation. The proposed theory and experimental data are used to estimate the carrier concentration in the solid solution and its composition.
- Subjects
INDIUM compounds; RAMAN spectroscopy; SOLID solutions; EPITAXY; THIN films; NONDESTRUCTIVE testing of metals; APPROXIMATION theory
- Publication
Inorganic Materials, 2011, Vol 47, Issue 4, p335
- ISSN
0020-1685
- Publication type
Article
- DOI
10.1134/S0020168511040029