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- Title
Thin-film PbSnTe:In/BaF<sub>2</sub>/CaF<sub>2</sub>/Si structures for monolithic matrix photodetectors operating in the far infrared range.
- Authors
Akimov, A. N.; Belenchuk, A. V.; Klimov, A. É; Kachanova, M. M.; Neizvestny, I. G.; Suprun, S. P.; Shapoval, O. M.; Sherstyakova, V. N.; Shumsky, V. N.
- Abstract
We report for the first time on the creation of 288 × 2 matrix photodetectors with an element size of 25 × 25 μm based on PbSnTe:In/BaF2/CaF2/Si structures and present their threshold characteristics. The detection ability of about 90% elements ranges from 7.2 × 1012 to 8.7 × 1012 cm Hz0.5/W at T = 21.2 K. The proposed technology opens ways to the creation of monolithic matrix photodetectors operating in the far-IR range.
- Subjects
OPTOELECTRONIC devices; THIN films; INFRARED radiation; DEMODULATION; MATRICES (Mathematics)
- Publication
Technical Physics Letters, 2009, Vol 35, Issue 6, p524
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785009060133