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- Title
InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
- Authors
Lundin, W. V.; Zavarin, E. E.; Sinitsyn, M. A.; Nikolaev, A. E.; Lundina, E. Yu.; Sakharov, A. V.; Troshkov, S. I.; Tsatsul'nikov, A. F.
- Abstract
One of the main factors that limit the maximum attainable efficiency of InGaAlN-based light-emitting diode (LED) structures grown on standard sapphire substrates is the low efficacy of extracting light from devices. A promising solution of this problem consists in using specially profiled (patterned) sapphire substrates. A method for the formation of a special surface microrelief on the sapphire substrates is described. The properties of GaN epilayers and InGaAlN-based LED heterostructures grown on such substrates are presented.
- Subjects
HETEROSTRUCTURES; SUBSTRATES (Materials science); LIGHT emitting diodes; SUPERLATTICES; NUCLEAR reactions; SPECTRUM analysis
- Publication
Technical Physics Letters, 2008, Vol 34, Issue 11, p924
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785008110072