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- Title
Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides.
- Authors
Jmerik, V. N.; Mizerov, A. M.; Shubina, T. V.; Listoshin, S. B.; Ivanov, S. V.
- Abstract
The intensity of the flux of activated nitrogen from an RF inductively coupled discharge source for the plasma-assisted molecular beam epitaxy (PAMBE) of group III nitrides (A3N) can be linearly controlled using a modified output diaphragm design and increased nitrogen supply (∼5 sccm). This source provides a linear variation of the maximum A3N growth rate from 0.2 to 0.8 μm/h for the RF power controlled between 110 and 200 W, respectively. The use of excited nitrogen molecules favorably influences the growth of GaN and InN epilayers, which are characterized by a perfect structure and high optical quality.
- Subjects
EPITAXY; MOLECULAR beam epitaxy; MOLECULAR dynamics; OPTICAL quality control; ACTIVE nitrogen
- Publication
Technical Physics Letters, 2007, Vol 33, Issue 4, p333
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785007040189