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- Title
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
- Authors
Bessolov, V. N.; Botnaryuk, V. M.; Zhilyaev, Yu. V.; Konenkova, E. V.; Poletaev, N. K.; Raevskiĭ, S. D.; Rodin, S. N.; Smirnov, S. L.; Sharofidinov, Sh.; Shcheglov, M. P.; Hee Seok Park; Koike, Masayoshi
- Abstract
The structure and luminescent properties of gallium nitride (GaN) epilayers grown by hydride-chloride vapor-phase epitaxy (HVPE) in a hydrogen or argon atmosphere on 2-inch Si(111) substrates with AlN buffer layers have been studied. The replacement of hydrogen atmosphere by argon for the HVPE growth of GaN leads to a decrease in the epilayer surface roughness. The ratio of intensities of the donor-acceptor and exciton bands in the luminescence spectrum decreases with decreasing growth temperature. For the best samples of GaN epilayers, the halfwidth (FWHM) of the X-ray rocking curve for the (0002) reflection was 420 sec of arc, and the FWHM of the band of exciton emission at 77 K was 48 meV.
- Subjects
GALLIUM nitride; GALLIUM compounds; NITRIDES; EPITAXY; ARGON
- Publication
Technical Physics Letters, 2006, Vol 32, Issue 8, p674
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785006080116