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- Title
Effects of Thicknesses of Two Different Gate Insulators on the Performance of Pentacene Based Organic Field Effect Transistor.
- Authors
Abdullah, Estabraq T.; Mohammed, Bushra H.
- Abstract
In this paper, a simulation of the electrical performance for Pentacene-based top-contact bottom-gate (TCBG) Organic Field-Effect Transistors (OFET) model with Polymethyl methacrylate (PMMA) and silicon nitride (Si3N4) as gate dielectrics was studied. The effects of gate dielectrics thickness on the device performance were investigated. The thickness of the two gate dielectric materials was in the range of 100-200nm to maintain a large current density and stable performance. MATLAB simulation demonstrated for model simulation results in terms of output and transfer characteristics for drain current and the transconductance. The layer thickness of 200nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.
- Subjects
PENTACENE; ORGANIC field-effect transistors; FIELD-effect transistors; ELECTRIC insulators &; insulation; METHACRYLATES
- Publication
Basrah Journal of Science / Magallat Al-Barat Li-L-ulum, 2021, Vol 39, Issue 1, p56
- ISSN
2664-8288
- Publication type
Article
- DOI
10.29072/basjs.202114