We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Compact Internally Matched High-Power Power Amplifier with a Wide Frequency Band of 0.8–2 GHz.
- Authors
Li, Caoyu; Zhang, Ziliang; Su, Xiang; Li, Yue; Liang, Xinru; Pei, Yi; Chen, Changchang; Xu, Yuehang
- Abstract
In this paper, a GaN high-electron-mobility transistor (HEMT) compact high-power wide-band power amplifier with an operation frequency from 0.8 GHz to 2 GHz is proposed. In order to realize a compact design, an internally matched method is employed. A wide-band matching strategy with an LC network and a multi-stage wide-band power combiner/divider is introduced in this design to achieve a wide bandwidth. A power combination structure is applied to have high output power. Wire-spiral inductance and film capacitors are employed to construct the compact matching network. The equivalent inductance of the bonding wire is also involved in the matching network. Experimental results show that the PAE (power-added efficiency) during the whole operation's bandwidth (0.8 GHz to 2.0 GHz) is from 40% to 57%. The output power can reach from 48.3 dBm to 49.8 dBm with a circuit size of 30.8 × 27.4 mm 2 .
- Subjects
BROADBAND amplifiers; CIRCUIT complexity; POWER amplifiers; ELECTRIC inductance; GALLIUM nitride; MODULATION-doped field-effect transistors
- Publication
Electronics (2079-9292), 2024, Vol 13, Issue 14, p2687
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics13142687