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- Title
Formation of Acceptor States on the Silicon Hydroxylated Surface Upon NO<sub>2</sub> Molecules Adsorption.
- Authors
Ptashchenko, Fedor
- Abstract
It is shown that the hypothesis of reactivation of subsurface boron atoms in porous silicon (PS) by NO2 molecules at their adsorption on the surface dangling bonds cannot explain the reversible increase of free holes concentration in <italic>n</italic>‐type PS and in <italic>p–n</italic> junctions with oxidized surface. The alternative model of hole conduction emergence in silicon structures upon adsorption of NO2 molecules is proposed. Density functional theory (DFT) calculations show that fixing NO2 molecules on the hydroxyl groups of silicon or its oxide surface can produce acceptor states and, therefore, free holes.
- Subjects
SILICON surfaces; POROUS silicon; NITROGEN dioxide analysis; DENSITY functional theory; POROUS materials; MATHEMATICAL models
- Publication
Physica Status Solidi (B), 2018, Vol 255, Issue 3, p1
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201700499