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- Title
Resistive switching memory device with metal-oxide quantum dots on a graphene layer.
- Authors
Lee, Dong Uk; Qiu, Dongri; Kim, Eun Kyu
- Abstract
We demonstrate a one diode-one resistor (1D-1R) type resistive switching memory device consisting of single layered metal-oxide quantum dots (QDs) and a vertically inserted graphene layer between the SiO2 layers on an n+-Si substrate. Mono-layered graphene on the bottom SiO2 layer with a thickness of 50 nm was capped by a 5 nm thick SiO2 top barrier layer deposited by using an ultra-high vacuum sputter. The In2O3 QDs layer embedded in the 50 nm thick biphenyltetracarboxylic dianhydride-phenylenediamine polymer layer was formed by a curing process using polyamic acid at 400 °C for 1 h. The current values of the high and low resistance states for this 1D-1R device were measured to be about 3.32 × 10−9 and 5.54 × 10−9 A at a read bias of 1 V, respectively. The ratio of each resistance after applying sweeping bias from +8 to −8 V and from −8 to +8 V appeared to be about 0.59 at 1 V. This resistance switching could have originated from the migration of the O−2 ions by the redox chemical reaction in the polyimide and carrier charging effect of the QDs. This hybrid memory structure with In2O3 QDs and graphene layer has a strong possibility for application in next generation nonvolatile memory devices.
- Subjects
SWITCHING theory; METALLIC oxides; GRAPHENE; QUANTUM dots; SEMICONDUCTORS
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 2, p325
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532408