We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications.
- Authors
Dutheil, P.; Orlianges, J.‐C.; Crunteanu, A.; Catherinot, A.; Champeaux, C.
- Abstract
(0002)-oriented AlN and ZnO thin films are deposited on C-sapphire substrates by pulsed laser deposition at 700 °C. Multilayered structures AlN/ZnO and ZnO/AlN are also grown on C-sapphire and investigated by X-ray diffraction, scanning electron microscopy and transmission measurements. Ellipsometry analysis is employed to investigate the stack of layers and the optical properties of thin films. This non-destructive analysis identified an intermediate layer between AlN and ZnO thin films for AlN/ZnO multilayer which didn't change the crystalline structure or piezoelectric properties of the multilayer. Surface acoustic wave velocities are respectively 5060 m s−1 for AlN and 5350 m s−1 for ZnO. In fact, investigations of surface acoustic wave (SAW) devices revealed a similar resonant frequency for both multilayers and in agreement with those measured for ZnO or AlN thin films.
- Subjects
ZINC oxide thin films; ACOUSTIC surface wave devices; PROGRAMMABLE logic devices; PULSED laser deposition; ELLIPSOMETRY; SCANNING electron microscopy; X-ray diffraction
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2015, Vol 212, Issue 4, p817
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201431747