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- Title
Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect.
- Authors
Wang, Lei; Guo, Xu; Dong, Songtao; Qiao, Yanxin; Chen, Jian; Yan, Zhen; Shu, Rong; Jin, Lei
- Abstract
In this study, the barrier properties and diffusion behavior of carbon-doped Cu(Ni) alloy film were investigated. The films were fabricated using magnetron sputtering on a barrierless silicon substrate. X-ray diffraction patterns and electric resistivity results demonstrated that the barrierless Cu(NiC) alloy films remained thermally stable up to 650 °C. Transmission electron microscopy images provided the presence of a self-formed diffusion layer between the Cu(NiC) alloy and Si substrate. The effect of carbon-doped atoms on the diffusion behavior of the Cu(NiC) films was analyzed by X-ray photoemission spectroscopy depth profile. Results revealed that carbon doping can improve the barrier properties of barrierless Cu(Ni) film. Moreover, X-ray photoemission spectroscopy was performed to examine the chemical states of the self-formed layer at the Cu(NiC)/Si interface. The self-formed diffusion layer was found to consist of Cu metal, Ni metal, Si, Cu2O, NiO, and SiO2.
- Subjects
COPPER; COPPER films; DOPING agents (Chemistry); PHOTOELECTRON spectroscopy; ELECTRICAL resistivity; TRANSMISSION electron microscopy
- Publication
Coatings (2079-6412), 2024, Vol 14, Issue 1, p68
- ISSN
2079-6412
- Publication type
Article
- DOI
10.3390/coatings14010068