Found: 16
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Nanomechanical Crystalline AlN Resonators with High Quality Factors for Quantum Optoelectromechanics.
- Published in:
- Advanced Materials, 2024, v. 36, n. 44, p. 1, doi. 10.1002/adma.202403155
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- Publication type:
- Article
Flexible Modulation of Electronic Band Structures of Wide Band Gap GaN Semiconductors Using Bioinspired, Nonbiological Helical Peptides.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 2, p. 1, doi. 10.1002/adfm.201704034
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- Publication type:
- Article
Design, synthesis, docking study and cytotoxic activity evaluation of some novel letrozole analogs.
- Published in:
- DARU: Journal of Pharmaceutical Sciences, 2014, v. 22, p. 1, doi. 10.1186/s40199-014-0083-4
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- Article
Design, synthesis, docking study and cytotoxic activity evaluation of some novel letrozole analogs.
- Published in:
- 2014
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- Publication type:
- journal article
Properties of C-doped GaN.
- Published in:
- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600708
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- Publication type:
- Article
Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 73, doi. 10.1002/pssb.201552451
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- Publication type:
- Article
Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers.
- Published in:
- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 118, doi. 10.1002/pssb.201552448
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- Publication type:
- Article
Sixteen years GaN on Si.
- Published in:
- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1063, doi. 10.1002/pssb.201451656
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- Publication type:
- Article
Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
- Published in:
- Physica Status Solidi (B), 2011, v. 248, n. 3, p. 578, doi. 10.1002/pssb.201046372
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- Publication type:
- Article
Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon.
- Published in:
- Physica Status Solidi (B), 2011, v. 248, n. 3, p. 594, doi. 10.1002/pssb.201046313
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- Publication type:
- Article
Characterization of AlGaInN layers using X-ray diffraction and fluorescence.
- Published in:
- Physica Status Solidi (B), 2011, v. 248, n. 3, p. 622, doi. 10.1002/pssb.201046418
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- Publication type:
- Article
Sputter Epitaxy of AlN and GaN on Si(111).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202200609
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- Publication type:
- Article
Impact of AlN/Si Nucleation Layers Grown Either by NH<sub>3</sub>‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700638
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- Publication type:
- Article
Laser-Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays.
- Published in:
- Small, 2007, v. 3, n. 1, p. 76, doi. 10.1002/smll.200600307
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- Publication type:
- Article
Template-Assisted Large-Scale Ordered Arrays of ZnO Pillars for Optical and Piezoelectric Applications.
- Published in:
- Small, 2006, v. 2, n. 4, p. 561, doi. 10.1002/smll.200500331
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- Publication type:
- Article
Transparente leitfähige Nitride.
- Published in:
- Vakuum in Forschung und Praxis, 2018, v. 30, n. 4, p. 26, doi. 10.1002/vipr.201800685
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- Publication type:
- Article