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Numerical investigation of an impact of a top gold metallization on output power of a p-up III-N-based blue-violet edge-emitting laser diode.
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- Opto-Electronics Review, 2015, v. 23, n. 2, p. 131, doi. 10.1515/oere-2015-0019
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- Article
Tilt of InGaN layers on miscut GaN substrates.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 142
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Waveguide Design for Long Wavelength InGaN Based Laser Diodes.
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- Acta Physica Polonica: A, 2012, v. 122, n. 6, p. 1031
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- Article
Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 672, doi. 10.12693/APhysPolA.119.672
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- Article
Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 476, doi. 10.1002/pssb.201100392
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- Article
Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure.
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- Physica Status Solidi (B), 2007, v. 244, n. 1, p. 32, doi. 10.1002/pssb.200672503
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- Article
Role of band potential roughness on the luminescence properties of InGaN quantum wells grown by MBE on bulk GaN substrates.
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- Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1614, doi. 10.1002/pssb.200565228
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- Article
Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure.
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- Physica Status Solidi (B), 2004, v. 241, n. 14, p. 3285, doi. 10.1002/pssb.200405208
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- Article
Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies.
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- Physica Status Solidi (B), 2003, v. 235, n. 2, p. 225, doi. 10.1002/pssb.200301561
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- Article
Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures.
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- Physica Status Solidi (B), 2002, v. 234, n. 3, p. 764, doi. 10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0
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- Article
Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells.
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- Physica Status Solidi (B), 2002, v. 234, n. 3, p. 759, doi. 10.1002/1521-3951(200212)234:3<759::AID-PSSB759>3.0.CO;2-L
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- Article
Pressure Studies of Defects and Impurities in Nitrides.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 521, doi. 10.1002/(SICI)1521-3951(199911)216:1<521::AID-PSSB521>3.0.CO;2-3
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- Article
Effect of Nitrogen-Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 135, doi. 10.1002/(SICI)1521-3951(199911)216:1<135::AID-PSSB135>3.0.CO;2-#
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- Article
Electrical Properties of GaN Bulk Single Crystals Doped with Mg.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 567, doi. 10.1002/(SICI)1521-3951(199911)216:1<567::AID-PSSB567>3.0.CO;2-0
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- Article
Metal-Insulator Transition in GaN Crystals.
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- Physica Status Solidi (B), 1996, v. 198, n. 1, p. 223, doi. 10.1002/pssb.2221980130
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- Article
New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.
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- Journal of Microscopy, 2009, v. 236, n. 2, p. 137, doi. 10.1111/j.1365-2818.2009.03285.x
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- Article
Different behavior of semipolar and polar InGaN/GaN quantum wells: Pressure studies of photoluminescence.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1526, doi. 10.1002/pssa.201000975
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Water Use Management in the Mining Industry: A Comparison Based on Company Size.
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- Journal of Environmental Accounting & Management, 2018, v. 6, n. 2, p. 135, doi. 10.5890/JEAM.2018.06.005
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- Article