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- Title
Highly Stable Forming‐Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between CC Bonding Complexes.
- Authors
Hyeon, Da Seul; Jang, Gabriel; Min, SunHwa; Hong, Jin Pyo
- Abstract
Recent advances in resistive switching devices have garnered a considerable amount of interest as an alternative option for next‐generation nonvolatile memories due to their distinct advantages of ultralow power consumption, fast operation, and outstanding scaling potential. Among the recently considered active media, amorphous carbon oxide (α‐C:Ox) shows promise in terms of device performance, essentially due to the transition between carbon sp2–sp3 complex under bias. However, widespread utilization of this media still remains a challenge due to its undesirable high forming voltage and insufficient stability issues. Here, a simple approach to stack a suitable Cu layer at the α‐C:Ox layer/W interface of simple Pt/α‐C:O/W frames is introduced to engineer resistive switching characteristics. Precise control of a stacked Cu layer (2.5 nm thick) identifies numerous benefits of forming‐free characteristics, reliable switching time, and appreciably stable features compared with those of single α‐C:Ox active medium. The possible principle underlying the experimental findings is described based on the oxygen ion drift‐driven transition between sp2 and sp3 bonds at the intermixed regions of α‐C:Ox/Cu interfaces under bias, which are systematically confirmed by structural observations.
- Subjects
AMORPHOUS carbon; CARBON oxides; ACTIVE medium; NONVOLATILE memory; HIGH voltages; INDIUM gallium zinc oxide
- Publication
Advanced Electronic Materials, 2022, Vol 8, Issue 2, p1
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.202100660