We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Quantitative analysis of blistering upon annealing of hydrogen-ion-implanted diamond single crystals.
- Authors
Kuznetsov, G. F.
- Abstract
Local blistering observed upon high-temperature annealing of natural diamond single crystals implanted by 350-keV hydrogen ions with a dose of 12 × 1016 cm−2 is studied. Based on room-temperature measurements, Griffith cracking criterion, and gas law, model quantitative calculations of blister size ( R j = (0.361−5.568) × 10−3 m, V j = (307−9695) × 10−18 m3) and the amount of molecules in a blister ( n j = (0.448−10.95) × 1013) are carried out for the first time. At room temperature, T 1 = 293 K, the amount of local elastic stresses σij in the upper layer of the diamond is counterbalanced by (inner) hydrogen pressure P ij of the (σ j1 = P j1 = (2.968−6.439) × 107 Pa). At annealing temperature T 2 = 1693 K, the hydrogen pressure rises to P j2 = (0.1717−0.8750) GPa. Under subsequent annealing at a still higher temperature, T 3 = 1743 K, the pressure in the blisters might be expected to grow to P j3 = (0.1747−0.9010) GPa; however, some of blisters collapse and thin diamond slices flake away.
- Subjects
ANNEALING of crystals; DIAMOND crystals; HYDROGEN ions; ELECTRON capture; TEMPERATURE effect; QUANTITATIVE chemical analysis
- Publication
Technical Physics, 2006, Vol 51, Issue 10, p1367
- ISSN
1063-7842
- Publication type
Article
- DOI
10.1134/S1063784206100197