We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Photoemission from p-GaAs(001) with nonequilibrium cesium overlayers.
- Authors
Zhuravlev, A.; Savchenko, M.; Paulish, A.; Alperovich, V.
- Abstract
The dependences of the photoemission current and effective electron affinity on the submonolayer cesium coverage at the adsorption of Cs on a GaAs(001) surface, as well as the kinetics of the photocurrent and affinity after the termination of Cs deposition, which is caused by the relaxation of the structure of a nonequilibrium adsorption layer, have been experimentally studied. The revealed features in the dependence of the photocurrent on the Cs coverage are attributed to a nonmonotonic behavior of the surface band bending in the Cs/GaAs(001) system. It has been established that a relaxation decrease in the photocurrent in the case of coverages smaller than half a monolayer is due to the relaxation of the band bending, whereas an increase in the photocurrent at larger coverages is caused by the relaxation of the electron affinity.
- Subjects
PHOTOEMISSION; GALLIUM arsenide; NONEQUILIBRIUM flow; CESIUM; ELECTRON affinity; CHEMICAL kinetics; SURFACE chemistry
- Publication
JETP Letters, 2013, Vol 98, Issue 8, p455
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364013210169