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- Title
Sol–Gel-Processed Y 2 O 3 –Al 2 O 3 Mixed Oxide-Based Resistive Random-Access-Memory Devices.
- Authors
Kim, Hae-In; Lee, Taehun; Cho, Yoonjin; Lee, Sangwoo; Lee, Won-Yong; Kim, Kwangeun; Jang, Jaewon
- Abstract
Herein, sol–gel-processed Y2O3–Al2O3 mixed oxide-based resistive random-access-memory (RRAM) devices with different proportions of the involved Y2O3 and Al2O3 precursors were fabricated on indium tin oxide/glass substrates. The corresponding structural, chemical, and electrical properties were investigated. The fabricated devices exhibited conventional bipolar RRAM characteristics without requiring a high-voltage forming process. With an increase in the percentage of Al2O3 precursor above 50 mol%, the crystallinity reduced, with the amorphous phase increasing owing to internal stress. Moreover, with increasing Al2O3 percentage, the lattice oxygen percentage increased and the oxygen vacancy percentage decreased. A 50% Y2O3–50% Al2O3 mixed oxide-based RRAM device exhibited the maximum high-resistance-state/low-resistance-state (HRS/LRS) ratio, as required for a large readout margin and array size. Additionally, this device demonstrated good endurance characteristics, maintaining stability for approximately 100 cycles with a high HRS/LRS ratio (>104). The HRS and LRS resistances were also retained up to 104 s without considerable degradation.
- Subjects
INDIUM tin oxide; RANDOM access memory; NONVOLATILE random-access memory; ALUMINUM oxide
- Publication
Nanomaterials (2079-4991), 2023, Vol 13, Issue 17, p2462
- ISSN
2079-4991
- Publication type
Article
- DOI
10.3390/nano13172462