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- Title
Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy.
- Authors
Mynbaev, K.; Shilyaev, A.; Bazhenov, N.; Izhnin, A.; Izhnin, I.; Mikhailov, N.; Varavin, V.; Dvoretsky, S.
- Abstract
The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.
- Subjects
CADMIUM alloys; METALLIC films; MOLECULAR beam epitaxy; PHOTOLUMINESCENCE; GALLIUM arsenide
- Publication
Semiconductors, 2015, Vol 49, Issue 3, p367
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782615030148