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- Title
A High-Performance Pure and Al-Doped CdSe Nanostructured Thin Film for Photo-Sensing Application.
- Authors
Kulkarni, Suvarna S.; Gawai, Umesh P.; Kamble, Shilpa D.; Upasani, Devashri P.; Sali, Jaydeep V.; Venkatesh, R.; Bhavsar, Deelip S.
- Abstract
In the present work, chemical bath deposition was employed at 80°C for the fabrication of pure and aluminum-substituted cadmium selenide thin films on glass substrate, with Al concentrations of 0–20%. x-ray diffraction and Raman spectroscopy were carried out to probe the structural properties of the thin films. In addition, the electronic structure and morphological and optical properties of the samples were systematically investigated by x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM), UV–visible (UV–Vis) spectroscopy, and photoluminescence (PL) spectroscopy, respectively. XPS spectra were acquired to determine the surface composition of 15% and 20% Al-doped CdSe thin film, demonstrating the successful doping of Al, which was also confirmed from EDS spectra. The XPS spectra showed that the binding energy (BE) values were shifted toward the lower BE side for increasing Al content. The direct energy band estimated from UV–Vis and PL data revealed a blueshift for all thin films. Raman spectra recorded for the pure and Al-doped CdSe thin films exhibited the strongest first-order phonon modes at ~ 203 cm−1 features of CdSe nanostructure formation. The XRD pattern analyzed using Rietveld refinement revealed that pure and Al-doped CdSe were of a sphalerite cubic structure. TEM images revealed the formation of nanowires and agglomerated nanocrystals of pure CdSe and 5% Al-doped CdSe thin film, supported by the AFM micrographs. The 10% Al-doped CdSe thin-film-based photosensor exhibited higher responsivity (0.77 A/W) and specific detectivity ( 2.68 × 10 11 cm Hz1/2 W−1) than pure and 5% Al-doped CdSe thin film.
- Publication
Journal of Electronic Materials, 2023, Vol 52, Issue 5, p3352
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-023-10310-3