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- Title
Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy<sub>2</sub>O<sub>3</sub> nano-layer processed by electron beam evaporation on n-GaAs substrate.
- Authors
Ouerghui, W.; Saghrouni, H.; Beji, L.
- Abstract
In this paper, we show and analyse the results of morphological characterisations of Dy2O3 layer deposited on an n-type GaAs substrate using atomic force microscopy (AFM). For structural measurement, the surface morphology of the elaborated layer was revealed as a nano-conical event. The global experimental ellipsometric results Ψ and Δ versus emission wavelength of the Dy2O3/n-GaAs structure have been presented and discussed. Using these results and a Matlab code in which we assumed the structure had three layers, we have calculated several linear and nonlinear optical constants of the Dy2O3 thin layer. Dysprosium oxide has high optical conductivity and a noticeable increase in nonlinear optical parameters, making it a promising candidate for various applications. This is especially true in the field of optoelectronics.
- Subjects
ATOMIC force microscopy; GALLIUM arsenide; ELECTRON beams; OPTICAL constants; ELLIPSOMETRY; OPTICAL conductivity; RARE earth oxides
- Publication
Optical & Quantum Electronics, 2024, Vol 56, Issue 3, p1
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-023-05866-7