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- Title
The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures.
- Authors
Vikhrova, O.; Dorokhin, M.; Demina, P.; Zvonkov, B.; Zdoroveishchev, A.; Danilov, Yu.; Kalentyeva, I.
- Abstract
We have studied the emission characteristics and circularly polarized electroluminescence of light-emitting diodes based on heterostructures with a single (GaAs/GaAsSb/GaAs) or two-layer (GaAs/InGaAs/GaAsSb/GaAs) quantum well (QW) and a Mn-delta-doped layer in the GaAs barrier. The ferromagnetic effect of the delta-layer of Mn on the spin polarization of carriers in QWs based on type-II heterostructures has been observed and studied for the first time. The observed phenomena are described using a model of the exchange interaction of Mn ions in the barrier and holes in the QW.
- Subjects
FERROMAGNETISM; MANGANESE; DOPED semiconductors; GALLIUM arsenide; HETEROSTRUCTURES; EMISSION spectroscopy; ELECTROLUMINESCENCE
- Publication
Technical Physics Letters, 2014, Vol 40, Issue 10, p930
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785014100290