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- Title
Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions.
- Authors
Vasil'ev, V.; Gagis, G.; Kuchinskii, V.; Khvostikov, V.; Marukhina, E.
- Abstract
A new method based on solid-state substitution reactions is proposed for obtaining nanodimensional layers of GaAsP solid solutions on the surface of GaAs semiconductor crystals. The processed GaAs wafers exhibit a wide-bandgap optical window effect, whereby their room-temperature photoluminescence intensity increases by a factor of up to 25.
- Subjects
GALLIUM arsenide; SOLID state chemistry; SUBSTITUTION reactions; SOLID solutions; SEMICONDUCTOR wafers; PHOTOLUMINESCENCE; TEMPERATURE effect; BAND gaps
- Publication
Technical Physics Letters, 2013, Vol 39, Issue 5, p472
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S106378501305026X