We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method.
- Authors
Sanjarovskii, N. A.; Parfenteva, I. B.; Yugova, T. G.; Knyazev, S. N.
- Abstract
Indium arsenide (InAs) single crystals heavily doped with Sn are found to have various violations of structural perfection, which depend on the Sn concentration in different regions of crystal. At low charge-carrier (electron) concentrations (~1.5 × 1018 cm–3) an unusual annular distribution of dislocations in the cross section is observed for the initial parts of crystal. The dislocation density lies in the range of (0.1–1.0) × 104 cm–2. At a carrier concentration above 4.0 × 1018 cm–3 indium inclusions and "vicinal growth hillocks" are observed in the final parts of crystals. The dislocation density in the final cross sections of crystals, in which the aforementioned defects are not observed, is in the range of (0.4–2.1) × 104 cm–2.
- Subjects
SINGLE crystals; CARRIER density; DISLOCATION density; INDIUM arsenide; CRYSTALS
- Publication
Crystallography Reports, 2022, Vol 67, Issue 7, p1095
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774522070483