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- Title
Atomic structure of conducting nanofilaments in TiO<sub>2</sub> resistive switching memory.
- Authors
Deok-Hwang Kwon; Kyung Min Kim; Jae Hyuck Jang; Jong Myeong Jeon; Min Hwan Lee; Gun Hwan Kim; Xiang-Shu Li; Gyeong-Su Park; Bora Lee; Seungwu Han; Miyoung Kim; Cheol Seong Hwang
- Abstract
Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO2/Pt system during resistive switching. In situ current–voltage and low-temperature (∼130 K) conductivity measurements confirm that switching occurs by the formation and disruption of TinO2n−1 (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.
- Subjects
METALLIC oxides; TRANSMISSION electron microscopy; THIN films; INFORMATION technology; TECHNOLOGICAL innovations
- Publication
Nature Nanotechnology, 2010, Vol 5, Issue 2, p148
- ISSN
1748-3387
- Publication type
Article
- DOI
10.1038/nnano.2009.456