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- Title
Activation kinetics of the As acceptor in HgCdTe.
- Authors
Shaw, D.; Capper, P.
- Abstract
The amphoteric model of As in HgCdTe is the basis of an investigation into how the transfer $${\hbox{A}\dot{\hbox{s}}_{\rm Hg} {\rightarrow} \hbox{As}^{\prime}_{\rm Te}}$$ is achieved under Hg saturation and so obtain a method for calculating optimum annealing times for the transfer. It is concluded that Schaake’s assumption that the transfer, or activation, process is diffusion limited, rather than reaction-rate limited, is a better fit to experimental data. The identification of the Te self-diffusivity in HgCdTe as due to Te i defects is considered to be incorrect. As a result, Schaake’s activation model can only underestimate the optimum anneal times for $${\hbox{As}^{\prime}_{\rm Te}}$$ activation if the experimentally observed Te self-diffusivity is used. An equation based on experimental activation data is given that permits an estimate of the optimum anneal time to be obtained in $${x_{\rm Cd} \sim 0.3}$$ HgCdTe layers.
- Subjects
SEPARATION (Technology); SATURATION vapor pressure; ANNEALING of metals; HEAT transfer; SEMICONDUCTOR diffusion; ELECTRICAL resistivity; NONLINEAR chemical kinetics; MATHEMATICAL analysis; ELECTRONICS
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 1, p67
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9269-6