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- Title
Temperature field design, process analysis and control of SAPMAC method for the growth of large size sapphire crystals.
- Authors
C. H. Xu; S. H. Meng; J. C. Han; G. G. Wang; H. B. Zuo
- Abstract
In this paper, the relationship between quality of sapphire crystal and growing parameters of SAPMAC (Sapphire growth technique with micro-pulling and shoulder-expanding at cooled center) method was discussed. Optimized temperature distribution and technique control were proposed by theoretical analysis, numerical simulation computation and experimental validation to obtain large size sapphire crystals. For a-axis crystallized direction, with 1.0-5.0mm/h growth velocity and 10-30K/h temperature decreasing speed, large sapphire single crystal (240mm×210mm, 27.5kg) having high optical quality was successfully grown. The absorption spectrum of standard samples was measured as well. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects
TEMPERATURE lapse rate; ABSORPTION; CRYSTAL growth; SAPPHIRES
- Publication
Crystal Research & Technology, 2007, Vol 42, Issue 8, p751
- ISSN
0232-1300
- Publication type
Article
- DOI
10.1002/crat.200710902