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- Title
Passivating gallium arsenide surface by gallium chalcogenide.
- Authors
Bezryadin, N. N.; Kotov, G. I.; Kuzubov, S. V.; Arsent'ev, I. N.; Tarasov, I. S.; Starodubtsev, A. A.; Sysoev, A. B.
- Abstract
We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and scanning (JEOL JSM-638 OLV) electron microscopy showed that GaAs substrates treated with selenium vapor produced a more pronounced orienting action on the subsequent deposition of GaAs as compared to the substrates covered with a natural oxide. The processing of a GaAs substrate in selenium vapor followed by the removal of the resulting Ga2Se3 layer increases the degree of smoothness of the substrate surface on the atomic level.
- Subjects
ARSENIDES; ARSENIC compounds; GALLIUM arsenide; ELECTRON microscopy; MICROSCOPY; SURFACES (Technology)
- Publication
Technical Physics Letters, 2008, Vol 34, Issue 5, p428
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785008050209