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- Title
Controlled Growth of Quasibicrystal Zinc Oxide Structures.
- Authors
Ataev, B. M.; Kamilov, I. K.; Bagamadova, A. M.; Mamedov, V. V.; Makhmudov, S. Sh.; Omaev, A. K.; Shakhshaev, Sh. O.
- Abstract
The first results on the controlled growth of quasibicrystal structures containing interblock boundaries in epitaxial zinc oxide layers on sapphire (α-Al[sub 2]O[sub 3]) are reported. The structures with boundaries oriented in a preset direction can be used as a base for submicron microelectronic devices. Using the method of buffer layers, it is possible to obtain highly oriented layers of (11&2macr;0)ZnO and (0001)ZnO with clear boundaries between blocks on the same (10&1macr;2)Al[sub 2]O[sub 3] substrate surface. Data on the features of structure and morphology of these layers are presented.
- Subjects
CRYSTAL growth; ZINC oxide; CRYSTAL grain boundaries; MICROELECTRONICS
- Publication
Technical Physics Letters, 2000, Vol 26, Issue 9, p837
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1315512