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- Title
Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires.
- Authors
Liu, Fengjing; Zhuang, Xinming; Wang, Mingxu; Qi, Dongqing; Dong, Shengpan; Yip, SenPo; Yin, Yanxue; Zhang, Jie; Sa, Zixu; Song, Kepeng; He, Longbing; Tan, Yang; Meng, You; Ho, Johnny C.; Liao, Lei; Chen, Feng; Yang, Zai-xing
- Abstract
Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics. A versatility growth strategy is developed for the lattice-mismatch-free construction of core-shell heterostructure NWs by adopting the promising III-V semiconductors and amorphous chalcogenide semiconductors using simple chemical vapor deposition.
- Subjects
NANOWIRES; CHEMICAL vapor deposition; AMORPHOUS semiconductors
- Publication
Nature Communications, 2023, Vol 14, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-023-43323-x