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- Title
Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.
- Authors
Kaschieva, S.; Rebohle, L.; Skorupa, W.
- Abstract
The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O[SUP+] or B[SUP+]) implanted samples are gamma-irradiated with [SUP60]Co. Gamma irradiation creates electron levels at the Si-SiO[SUB2] interface of the samples in a different way depending on the type of the previously implanted atoms (O[SUP+] or B[SUP+]). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples.
- Subjects
METAL oxide semiconductors; GAMMA rays; ION implantation
- Publication
Applied Physics A: Materials Science & Processing, 2003, Vol 76, Issue 5, p823
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-002-1963-x