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- Title
Photoluminescence Characteristics of Multilayer HfSe<sub>2</sub> Synthesized on Sapphire Using Ion Implantation.
- Authors
Tsai, Hsu‐Sheng; Liou, Jhe‐Wei; Setiyawati, Icuk; Chiang, Kuan‐Rong; Chen, Chia‐Wei; Chi, Chi‐Chong; Chueh, Yu‐Lun; Ouyang, Hao; Tang, Yu‐Hui; Woon, Wei‐Yen; Liang, Jenq‐Horng
- Abstract
Abstract: The multilayer HfSe2 on sapphire is first fabricated by the ion beam‐assisted process combining ion implantation with the post annealing. The A1g mode of HfSe2 is shown in the Raman spectrum, the X‐ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe2. The six‐layered (6L) octahedral HfSe2 (1T‐HfSe2), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.
- Subjects
HAFNIUM compounds; SAPPHIRES; FABRICATION (Manufacturing); ION implantation; CRYSTAL structure; ANNEALING of crystals
- Publication
Advanced Materials Interfaces, 2018, Vol 5, Issue 8, p1
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201701619