Found: 37
Select item for more details and to access through your institution.
62‐1: High Performance OLED with Microlens Array, Metal Mask‐Less Lithography, and RGB Side‐by‐Side Patterning.
- Published in:
- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 844, doi. 10.1002/sdtp.17663
- By:
- Publication type:
- Article
13‐2: Organic Light‐Emitting Diode Display Constituted Side‐by‐Side OLED and Organic Photodiode Pixels Integrated in the Same Plane by Adopting MML (Metal Mask‐Less Lithography) Technology.
- Published in:
- SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 138, doi. 10.1002/sdtp.17473
- By:
- Publication type:
- Article
48‐2: Vertical Oxide Semiconductor Transistor Suitable for High‐Resolution OLED Display.
- Published in:
- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 695, doi. 10.1002/sdtp.16654
- By:
- Publication type:
- Article
43‐4: Ultra‐High On‐Current Vertical Field‐Effect Transistor with Submicron Channel Length of 0.5 µm Using CAAC‐IGZO.
- Published in:
- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 623, doi. 10.1002/sdtp.16635
- By:
- Publication type:
- Article
17‐3: An 8.3‐inch 1058‐ppi OLED Display with Side‐by‐Side Pixel Structure Fully Fabricated by Photolithography.
- Published in:
- SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 209, doi. 10.1002/sdtp.16527
- By:
- Publication type:
- Article
P‐4: Novel Oxide Semiconductors Enabling as High On‐State Current as LTPS.
- Published in:
- SID Symposium Digest of Technical Papers, 2021, v. 52, n. 1, p. 1070, doi. 10.1002/sdtp.14877
- By:
- Publication type:
- Article
9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length.
- Published in:
- SID Symposium Digest of Technical Papers, 2021, v. 52, n. 1, p. 103, doi. 10.1002/sdtp.14621
- By:
- Publication type:
- Article
46‐4: 513‐ppi Hybrid Display with Stacked Transistors.
- Published in:
- SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 617, doi. 10.1002/sdtp.12406
- By:
- Publication type:
- Article
50‐3: Formation of Source and Drain Regions in Top‐Gate Self‐Aligned Oxide Semiconductor Field‐Effect Transistor.
- Published in:
- SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 660, doi. 10.1002/sdtp.12333
- By:
- Publication type:
- Article
P-7: A 65-in. 8K LCD and OLED Display Using Cloud-Aligned Composite Oxide-Semiconductor (CAC-OS) FET.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 1250, doi. 10.1002/sdtp.11853
- By:
- Publication type:
- Article
76-2: Field-Effect Transistor with CAAC/CAC-OS Double-Layer Structure for Diversion of Gen 8-10.5 Amorphous Silicon Production Lines.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 1112, doi. 10.1002/sdtp.11829
- By:
- Publication type:
- Article
42-2: Low Power Consumption 8K Liquid Crystal Display with Oxide Semiconductor/Oxide Conductor Pixel (Transparent Pixel).
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 596, doi. 10.1002/sdtp.11708
- By:
- Publication type:
- Article
24-1: Invited Paper: Flexible OLED Display Using C-Axis-Aligned-Crystal/Cloud-Aligned Composite Oxide Semiconductor Technology and Laser Separation Technology.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 329, doi. 10.1002/sdtp.11641
- By:
- Publication type:
- Article
44-2: Separation Process using Commercially Available Polyimide or Acrylic with Linear Laser.
- Published in:
- SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 627, doi. 10.1002/sdtp.11717
- By:
- Publication type:
- Article
Development of a Top-Gate Transistor with Short Channel Length and C Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1037, doi. 10.1002/sdtp.10920
- By:
- Publication type:
- Article
Application of Transfer Technology to Manufacturing of Transmissive OLED and Reflective LC Hybrid (TR-Hybrid) Display.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1002, doi. 10.1002/sdtp.10900
- By:
- Publication type:
- Article
CAAC-IGZO Technology.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1029, doi. 10.1002/sdtp.10904
- By:
- Publication type:
- Article
Fabrication of 5.5-inch 4K2K Liquid Crystal Panel using High-mobility IGZO Material.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1656, doi. 10.1002/sdtp.11011
- By:
- Publication type:
- Article
P-11: Channel-Etched CAAC-OS FETs using Multi-layer IGZO.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1158, doi. 10.1002/sdtp.10037
- By:
- Publication type:
- Article
63.3: Fabrication of 8k4k Organic EL Panel using High-Mobility IGZO Material.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 939, doi. 10.1002/sdtp.10415
- By:
- Publication type:
- Article
4.1: Distinguished Paper: Apparatus for Manufacturing Flexible OLED Displays: Adoption of Transfer Technology.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 8, doi. 10.1002/sdtp.10166
- By:
- Publication type:
- Article
33.1: Channel-Etched C-Axis Aligned Crystalline Oxide Semiconductor FET Using Cu Wiring.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 465, doi. 10.1002/j.2168-0159.2014.tb00121.x
- By:
- Publication type:
- Article
52.3: Development of Back-channel-etched TFT Using C-Axis Aligned Crystalline In-Ga-Zn-Oxide.
- Published in:
- 2013
- By:
- Publication type:
- Other
56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT.
- Published in:
- 2013
- By:
- Publication type:
- Other
Polymer-Stabilized Blue-Phase Material Driven at Low Voltage.
- Published in:
- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 18, doi. 10.1002/j.2168-0159.2012.tb05697.x
- By:
- Publication type:
- Article
New Threshold Voltage Compensation Pixel Circuits in 13.5-inch Quad Full High Definition OLED Display of Crystalline In-Ga-Zn-Oxide FETs.
- Published in:
- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 88, doi. 10.1002/j.2168-0159.2012.tb05717.x
- By:
- Publication type:
- Article
Crystalline OS-LCD Using Blue-Phase Liquid Crystal Having Characteristic Texture.
- Published in:
- SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 201, doi. 10.1002/j.2168-0159.2012.tb05747.x
- By:
- Publication type:
- Article
123 I-BMIPP, a Radiopharmaceutical for Myocardial Fatty Acid Metabolism Scintigraphy, Could Be Utilized in Bacterial Infection Imaging.
- Published in:
- Pharmaceutics, 2022, v. 14, n. 5, p. 1008, doi. 10.3390/pharmaceutics14051008
- By:
- Publication type:
- Article
Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display.
- Published in:
- Journal of the Society for Information Display, 2024, v. 32, n. 7, p. 501, doi. 10.1002/jsid.1334
- By:
- Publication type:
- Article
Recurrence rates and risk factors for seizure recurrence following antiseizure medication withdrawal in adolescent patients with genetic generalized epilepsy.
- Published in:
- Epilepsia Open, 2022, v. 7, n. 2, p. 332, doi. 10.1002/epi4.12603
- By:
- Publication type:
- Article
Alzheimer's disease: Report of two autopsy cases with a clinical diagnosis of corticobasal degeneration.
- Published in:
- Neuropathology, 2010, v. 30, n. 2, p. 140, doi. 10.1111/j.1440-1789.2009.01062.x
- By:
- Publication type:
- Article
Fabrication of 8K4K organic EL panel using high-mobility IGZO material.
- Published in:
- Journal of the Society for Information Display, 2015, v. 23, n. 12, p. 561, doi. 10.1002/jsid.396
- By:
- Publication type:
- Article
Transfer technology using inorganic separation layer and apparatus for fabricating flexible OLED displays.
- Published in:
- Journal of the Society for Information Display, 2015, v. 23, n. 11, p. 543, doi. 10.1002/jsid.398
- By:
- Publication type:
- Article
A 513-ppi FFS-mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode.
- Published in:
- Journal of the Society for Information Display, 2014, v. 22, n. 4, p. 216, doi. 10.1002/jsid.241
- By:
- Publication type:
- Article
Back-channel-etched thin-film transistor using c-axis-aligned crystal In-Ga-Zn oxide.
- Published in:
- Journal of the Society for Information Display, 2014, v. 22, n. 1, p. 55, doi. 10.1002/jsid.211
- By:
- Publication type:
- Article
Neuronal differentiation associated with Gli3 expression predicts favorable outcome for patients with medulloblastoma.
- Published in:
- Neuropathology, 2014, v. 34, n. 1, p. 1, doi. 10.1111/neup.12052
- By:
- Publication type:
- Article
Widespread ischemic brain lesions caused by vasculopathy associated with neurofibromatosis type 1.
- Published in:
- Neuropathology, 2010, v. 30, n. 6, p. 627, doi. 10.1111/j.1440-1789.2009.01097.x
- By:
- Publication type:
- Article