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- Title
MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al<sub>2</sub>O<sub>3</sub>.
- Authors
Lutsenko, E. V.; Rzheutski, M. V.; Vainilovich, A. G.; Svitsiankou, I. E.; Shulenkova, V. A.; Muravitskaya, E. V.; Alexeev, A. N.; Petrov, S. I.; Yablonskii, G. P.
- Abstract
Abstract: The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGaN layers was determined analyzing thermal decomposition rate of GaN. Based on the information, high electron mobility transistor heterostructures were grown on sapphire substrates using both ammonia and combined plasma-assisted/ammonia MBE modes. The highest achieved 2DEG mobility was 1992 cm2/(V s) (at 2DEG density of 1.17 × 1013 cm-2) which is the current state-of-the-art level.
- Subjects
ALUMINUM gallium nitride; GALLIUM nitride; MOLECULAR beam epitaxy; MODULATION-doped field-effect transistors; BUFFER layers; ALUMINUM nitride; ALUMINUM oxide
- Publication
Semiconductors, 2018, Vol 52, Issue 16, p2107
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618160170