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- Title
Investigation of phase changes in Ge<sub>1</sub>Sb<sub>4</sub>Te<sub>7</sub> films by single ultra-fast laser pulses.
- Authors
Huang, S. M.; Huang, S. Y.; Zhao, Z. J.; Sun, Z.
- Abstract
The phase transformations induced in a Ge1Sb4Te7 system by a femtosecond (fs) laser exposure were investigated. The system has a multilayer structure of 15 nm ZnS–SiO2/80 nm Ge1Sb4Te7/100 nm ZnS–SiO2/0.6 mm polycarbonate substrate. The morphology and contrast of marks formed in both amorphous and crystalline backgrounds by single fs pulses were characterized using an optical microscope. X-ray diffraction was applied to identify the crystal structures formed by single fs shots. Phase-reversible transformations in the system have been achieved through careful adjustment of the laser fluence. The mechanism of reversibility triggered by fs laser pulses is discussed. The feasibility of phase-change reversible optical recording with the active Ge1Sb4Te7 layer using single fs pulses with a duration of 400 fs within well-defined fluence and pulse energy windows is therefore demonstrated. Our work also demonstrates that it is possible to record and retrieve data rapidly in the Ge1Sb4Te7 film within a conventional optical disk structure using non-amplified laser systems as laser sources.
- Subjects
PHASE transitions; POLYCARBONATES; LASER beams; OPTICAL diffraction; NONLINEAR optics; OPTICAL disk drives; OPTICAL disks
- Publication
Applied Physics A: Materials Science & Processing, 2006, Vol 82, Issue 3, p529
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-005-3414-y