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- Title
Characteristics research of pressure sensor based on nanopolysilicon thin films resistors.
- Authors
Zhao, Xiaofeng; Li, Dandan; Wen, Dianzhong
- Abstract
To further improve the sensitivity temperature characteristics of pressure sensor, a kind of pressure sensor taking nanopolysilicon thin films as piezoresistors is proposed in this paper. On the basis of the microstructure analysis by X-ray diffraction (XRD) and scanning electron microscope (SEM) tests, the preparing process of nanopolysilicon thin films is optimized. The effects of film thickness and annealing temperature on the micro-structure of nanopolysilicon thin films were studied, respectively. In order to realize the measurement of external pressure, four nanopolysilicon thin films resistors were arranged at the edges of square silicon diaphragm connected to a Wheatstone bridge, and the chip of the sensor was designed and fabricated on a orientation silicon wafer by microelectromechanical system (MEMS) technology. Experimental result shows that when = 6.80 mA, the sensitivity of the sensor PS-1 is 0.308 mV/kPa, and the temperature coefficient of sensitivity (TCS) is about −1742 ppm/C in the range of −40-140C. It is possible to obviously improve the sensitivity temperature characteristics of pressure sensor by the proposed sensors.
- Subjects
PRESSURE sensors; THIN film resistors; EFFECT of temperature on thin films; PIEZORESISTIVE devices; MICROELECTROMECHANICAL systems; X-ray diffraction; SCANNING electron microscopy
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, Vol 31, Issue 26, p-1
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979217501831