We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Non-recombination injection mode.
- Authors
Leyderman, A. Yu.; Ayukhanov, R. A.; Turmanova, R. M.; Uteniyazov, A. K.; Esenbaeva, E. S.
- Abstract
A new type of injection regime is considered - non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the nbase with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the currentvoltage characteristic is observed for the Al-Al2O3-CdTe structure.
- Subjects
CARRIER density; POLITICAL systems; CHARGE carriers
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, Vol 24, Issue 3, p248
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo24.03.248