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- Title
Influence of annealing time on microstructure and dielectric properties of (BaSr)(ZnNb)O ceramic thin films prepared by sol-gel method.
- Authors
Shi, Feng; Wang, Jing; Sun, Haiqing
- Abstract
(BaSr)(ZnNb)O dielectric ceramic thin films were fabricated on Si(100) substrates by sol-gel method followed by annealing in O atmosphere at 900 °C for 5, 15, 30, and 45 min. Results show that the surface morphologies of the samples are crack free and compact with well-crystallized structures. The grain sizes of the thin films increase with increased annealing time from 5 to 30 min. Thin films annealed for 30 min possess the minimum root-mean-square (RMS) value of roughness and the highest crystallinity among all samples as well as the best dielectric properties. Thus, 30 min is the optimal annealing time.
- Subjects
DIELECTRIC properties; THIN films; OPTICAL properties; SOL-gel processes; SURFACE morphology; STANDARD deviations
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 5, p4607
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-4337-4