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- Title
Effect of boron doping on the optoelectronic properties of nanostructure SnO thin film by ultrasonic spray pyrolysis on quartz substrate.
- Authors
Guo, Yi-Xin; Wu, Ping; Cheng, Wen-Juan
- Abstract
In this work, undoped and boron doped nanostructure SnO films were synthesized by a simple ultrasonic spray pyrolysis method onto quartz substrate at 315 °C and then annealed at 550 °C. The structure, morphology, optical, electrical and photoluminescence properties of the films were studied. The X-ray diffraction results confirmed that the boron doped SnO films were tetragonal phase with preferred orientation in (110) plane and the scanning electron microscopy images showed obvious morphology change caused by boron doping. The Fourier transform infrared spectrometer (FTIR) and Hall effect measurement revealed the boron ions preferred occupying the interstice of SnO lattice to replacing the tin ions. The lowest resistivity was 3.525 × 10 Ω cm with 4 at.% boron doping. The boron doping improved the average optic transparency in visible (400-800 nm) range from 83.97 to 93.28 %. The band gaps of the films were widened from 4.09 to 4.23 eV and then decreased. Boron doped SnO films showed a strong emission peak around 364 nm and weak blue-green emission peak around 457 nm. The results confirmed boron doped SnO film can be suitable for applying in nano-optoelectronics devices.
- Subjects
NANOSTRUCTURED materials; PYROLYSIS; PHOTOLUMINESCENCE; FOURIER transform infrared spectrophotometers; BAND gaps; OPTOELECTRONICS
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 7, p4922
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3003-6