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- Title
Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.
- Authors
Arslan, Engin; Ozturk, Mustafa; Çakmak, Huseyin; Demirel, Pakize; Özçelik, Süleyman; Ozbay, Ekmel
- Abstract
The InGaN epitaxial layers, with indium ( x) concentration changes between 0.16 and 1.00 (InN), were grown on GaN template/(0001) AlO substrate by metal organic chemical vapour deposition. The indium content (x), lattice parameters and strain values in the InGaN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10-15) reflection of the GaN and InGaN layers. The characteristics of mosaic structures, such as lateral and vertical coherence lengths, tilt and twist angle and heterogeneous strain and dislocation densities (edge and screw dislocations) of the InGaN epilayers and GaN template layers were investigated by using high-resolution X-ray diffraction (HR-XRD) measurements. With a combination of Williamson-Hall (W-H) measurements and the fitting of twist angles, it was found that the indium content in the InGaN epilayers did not strongly effect the mosaic structures' parameters, lateral and vertical coherence lengths, tilt and twist angle, or heterogeneous strain of the InGaN epilayers.
- Subjects
GALLIUM nitride; SAPPHIRES; MOSAIC structure; INDIUM; EPITAXIAL layers; METAL organic chemical vapor deposition; X-ray diffraction
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 11, p4471
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1427-4