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- Title
An Investigation of Phase Transformation Behavior in Sputter-Deposited PtMn Thin Films.
- Authors
Ji, C.-X.; Ladwig, Peter F.; Ott, Ronald D.; Yang, Y.; Yang, Joshua J.; Chang, Y. Austin; Linville, Eric S.; Gao, Jenny; Pant, Bharat B.
- Abstract
Sputter-deposited, equiatomic PtMn thin films have application in giant magnetoresistive spin valves, tunneling magnetoresistive spin valves, and magnetic random access memory. However, the as-deposited films are found to be a disordered A1 phase in a paramagnetic state rather than an antiferromagnetic phase with L10 structure, which is needed for device operation. Therefore, a post-annealing step is required to induce the phase transformation from the as-deposited A1 face-centered-cubic phase to the antiferromagnetic L10 phase. The A1 to L10 metastable transformation was studied by x-ray diffraction and differential-scanning calorimetry. An exothermic transformation enthalpy of -12.1 kJ/mol of atoms was determined. The transformation kinetics were simulated using the Johnson-Mehl-Avrami analysis.
- Subjects
THIN films; RANDOM access memory; SOLID state electronics; SPIN valves; MAGNETIC devices; ENTHALPY
- Publication
JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2006, Vol 58, Issue 6, p50
- ISSN
1047-4838
- Publication type
Article
- DOI
10.1007/s11837-006-0182-x