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- Title
Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon emission.
- Authors
Ying Yu; Guo-Wei Zha; Xiang-Jun Shang; Shuang Yang; Ban-Quan Sun; Hai-Qiao Ni; Zhi-Chuan Niu
- Abstract
In this chapter, we discuss the epitaxial growth of self-assembled quantum dots (QDs) in GaAs nanowires (NWs) and the characteristics of their single-photon emissions. We demonstrate Ga droplet-induced gold-free vapor-liquid-solid growth of hexagonal GaAs/AlGaAs core-shell NWs, branched GaAs NWs and tailored nanostructured morphologies on theNWfacets. Particularly, we show two new types of QD-in-NW systems: one is a single InAs QD formed at the corner of a branched GaAs NW, and the other is a single GaAs QD formed on the NWfacet. Sharp excitonic emission spectral lines are observed with vanishing two-photon emission probability. Furthermore, a single GaAs QD is achieved at the site of a single AlGaAs quantum ring (QR) on the NWfacet. In addition, these NW-based single QDs are in-situ probed and integrated with single-mode optical fibers to achieve all-fiber-output single-photon sources for potential application in quantum integrated networks.
- Subjects
SEMICONDUCTOR quantum dots; NANOWIRES; PHOTON emission
- Publication
National Science Review, 2017, Vol 4, Issue 2, p196
- ISSN
2095-5138
- Publication type
Article
- DOI
10.1093/nsr/nwx042