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- Title
Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region.
- Authors
Peng, Ying; Miao, Lei; Liu, Chengyan; Song, Haili; Kurosawa, Masashi; Nakatsuka, Osamu; Back, Song Yi; Rhyee, Jong Soo; Murata, Masayuki; Tanemura, Sakae; Baba, Takahiro; Baba, Tetsuya; Ishizaki, Takahiro; Mori, Takao
- Abstract
SiGe‐based thermoelectric (TE) materials are well‐known for high‐temperature utilization, but rarely relevant in the low temperature region. Here a Ge quantum dots (QDs) and Sn precipitation SiGeSn hybrid film are constructed via ultrafast high temperature annealing (UHA) of a treated P‐ion implantation SiGeSn film on Si/SiO2 substrate. Combining the modulation doping effect dominated by Sn precipitates and the energy filtering effect caused by Ge QDs, the optimized SiGe films achieve a giant power factor as high as 91 µW cm−1 K−2 @300 K, room temperature, while maintaining low thermal conductivity. This strategy on film construction provides a novel insight for TE materials with striking performance.
- Subjects
QUANTUM dots; LOW temperatures; TIN; THERMAL conductivity; THERMOELECTRIC materials; HIGH temperatures
- Publication
Advanced Energy Materials, 2022, Vol 12, Issue 2, p1
- ISSN
1614-6832
- Publication type
Article
- DOI
10.1002/aenm.202103191