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- Title
A 1-GHz GaN HEMT based class-E power amplifier with 80% efficiency.
- Authors
Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
- Abstract
This article reports a highly efficient 1-GHz class-E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. The peak PAE and drain efficiency of 79.2 and 80.4% with a power gain of 18.14 dB is achieved at an output power of 41.14 dBm for a continuous wave. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2989–2992, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23803
- Subjects
MODULATION-doped field-effect transistors; POWER amplifiers; ELECTRIC inductors; TRANSISTOR circuits; ELECTRIC lines
- Publication
Microwave & Optical Technology Letters, 2008, Vol 50, Issue 11, p2989
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.23803