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- Title
Room temperature FET.
- Abstract
The article focuses on the construction of a field-effect transistor (FET) by the chemists at Stanford University in California. The transistor includes a graphene that can operate at room temperature. It notes that previous graphene FET demonstrations have been performed at liquid helium temperature (4K). The researchers made 10 nanometer wide graphene nanoribbons, enabling the FET to operate at the higher temperature. Study suggests that it has implications for increasing the speed of computers. FETs are considered as the key elements of silicon-based computer chips. However, they predict that these chips will reach their maximum shrinking point within the next decade.
- Subjects
CALIFORNIA; FIELD-effect transistors -- Design &; construction; TRANSISTORS; IONIC liquids; LIQUID helium; HELIUM at low temperatures; INTEGRATED circuits; CHEMISTS; STANFORD University
- Publication
Chemical Engineering, 2008, Vol 115, Issue 7, p13
- ISSN
0009-2460
- Publication type
Article