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- Title
Preparation and properties of CdS<sub>0.25</sub>Se<sub>0.75</sub>/N-GQDs/3D rGO ternary composites.
- Authors
Liu, Kaiwei; Du, Beibei; Zhao, Liyang; Lei, Yun; Wang, Yongqin; Li, Can; Luo, Linhui; Deng, Yifan; Tang, Zehui; Chen, Jiong
- Abstract
In this paper, CdS0.25Se0.75, N-GQDs and 3D rGO are combined to obtain a hexagonal ternary CdS0.25Se0.75/N-GQDs/3D rGO, which was employed to improve the photoelectric performance of alloy semiconductor CdSSe. The steady-state photocurrent density of CdS0.25Se0.75/N-GQDs/3D rGO reaches 9.4 × 10−5 A/cm2, which is 30 times higher than that of CdS0.25Se0.75/N-GQDs and 300 times higher than that of pure CdS0.25Se0.75 semiconductors. The electrochemical impedance spectroscopy (EIS) results show that the interface charge transfer resistance of CdS0.25Se0.75/N-GQDs/3D rGO is lower than that of CdS0.25Se0.75/N-GQDs and CdS0.25Se0.75. From the calculated result of Mott–Schottky tests, the carrier density of CdS0.25Se0.75/N-GQDs/3D rGO reaches 3.99 × 1020 cm−3, which is superior to that of CdS0.25Se0.75 (1.85 × 1020 cm−3) and CdS0.25Se0.75/N-GQDs (3.18 × 1020 cm−3). Among them, N-GQDs serve as photosensitizers to improve the light absorption and 3D rGO aerogels serve as electron-transfer substrates for charge separation and transport instead of recombination of electron–hole pairs.
- Publication
Journal of Materials Science: Materials in Electronics, 2024, Vol 35, Issue 18, p1
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-024-12913-w