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- Title
Features of Processing of Cadmium Zinc Telluride Wafers for Molecular Beam Epitaxy Growth of Cadmium Mercury Telluride Layers.
- Authors
Trofimov, A. A.; Denisov, I. A.; Smirnova, N. A.; Shabrin, A. D.; Goncharov, A. E.; Novikova, A. A.; Mozhaeva, M. O.; Gladysheva, K. A.; Kosyakova, A. M.; Malygin, V. A.; Kuznetsova, S. A.; Ilyinov, D. V.; Sukhanova, A. S.
- Abstract
The cadmium mercury telluride solid solution is one of the most important infrared photoelectronic materials in the world. In obtaining this compound, molecular beam epitaxy has a number of advantages over other methods. At the same time, this solid solution is quite demanding on the pre-growth processing of substrates. In this study, the polishing processes are the primary development in mastering the production of cadmium mercury telluride (211) wafers. A roughness value of ~1 nm is obtained.
- Subjects
MOLECULAR beam epitaxy; CADMIUM zinc telluride; CADMIUM telluride; SOLID solutions; MERCURY; CADMIUM
- Publication
Journal of Communications Technology & Electronics, 2023, Vol 68, Issue 9, p1114
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S1064226923090255